On the Formation of Low-Resistivity Contacts for 4H-SiC Bipolar Devices

The results of studies on the development technological methods for formation low-resistivity contact systems to n- and p-SiC based single multilayer Ni-, Al- Ti-compositions 4H-SiC bipolar devices are presented. It is shown that contacts Ni n-4H-SiC (rho c =3.6·10 -4 Ohm·cm 2 ) Ni/Al p-4H-SiC =5.9·10 -5 possible within a cycle vacuum annealing at 1000 o C 120 s. This solution makes it reduce number high-temperature processes. Keywords: 4H-SiC, n-type, p-type, ohmic contacts, RTA, TLM, specific resistivity.